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Location: Main > Optical Crystals Ceramics > Cr YAG Crystals Passive Q Switch > CYQ1064-D12/2.55-66.57
Name: DIA12.0mm 1064nm Cr4+ YAG Q-Switch Crystal_Ti66.6%
P/N: CYQ1064-D12/2.55-66.57
Keywords:Dia12.0xT2.55mm,Cr4+:YAG,Ti:66.57%,AR/AR@1064nm
Unit Price: S$450.00/pc
Available: In stock
Request: Add to Request List
Introduction:
Passive Q-Switching is preferred for simplicity of manufacturing and operation, low cost and reduced system size and weight. Cr4+:YAG (Y3Al5O12) is an excellent crystal for passively Q-switching diode pumped or flash-lamp pumped Nd:YAG, Nd:YLF, Yb:YAG or other Nd and Yb doped lasers at wavelength from 1.0 to 1.2 mm. Because of its chemically stable, durable, UV resistant, good thermal conductivity and high damage threshold (> 500 MW/cm2) and being easy to be operated, it will replace traditional materials, such as, LiF, organic Dye and color centers.

Cr4+: YAG crystal is A High Power, Solid State and Compact Passive Q-switch

AR-coatings and HR-coatings are also available. The initial transmission (Ti) from 10% to 95% can be designed per customer's request. Standard sizes with Ti = 60% - 95% in inventory for immediate delivery. May email us for stock info.
Preliminary experiments with Cr4+:YAG show that the pulse width of passively Q-switched lasers could be as short as 9 ns for diode pumped Nd:YAG lasers and repetition as high as 10kHz for diode pumped Nd:YVO4 lasers.
Note: When ordering Cr4+:YAG crystal, please specify clear aperture, initial transmission(Ti) and coating specifications.

Crystal Material:
Formula: Cr4+:Y3Al5O12
Cr4+:YAG (Chromium Doped Yttrium Aluminum Garnet Crystal (Cr4+:YAG)
Crystal Structure:
Cubic Garnet
Cr 4+ Doping:
0.5 mol% ~ 3.0 mol% typ
Refractive Index:
1.82 @ 1064 nm
Damage Threshold
>500 MW/cm2
Hardness:
8.5 (Mohs)
Outer Diameter:
12.0, -0.1/-0.0mm
Crystal Thickness:
2.55, +/-0.05mm
Surface Quality:
Two end surface(DIA6.00mm) flat/flat,10-5 S/D(polished); 20-10 S/D after 2-surface coated
Clear Aperture:
>90% over surfaces
Flatness:
within lambda/10 @ 633nm over clear aperture
Parallelism:
<20 arc seconds
Chamfer:
0.10 +/-0.05mm @ 45-deg
Chip:
<0.1mm
Coating:
Both surfaces; AR @ 1064 +/-10nm(R<0.15%), 0-deg AOI
Damage threshold: >1MW/cm2 CW, 5J/cm2 (10ns pulses)
Initial Transmission(Ti):
66.57% @ 1064nm tested

 
 
 
 
 
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